The Effect of Crystallization on Doping Efficiency in A-Si-H Films

Y HE,YH YEN,R WU,K CHEN
DOI: https://doi.org/10.1016/0022-3093(83)90299-5
IF: 4.458
1983-01-01
Journal of Non-Crystalline Solids
Abstract:The structure of A-Si:H films can be changed by substitutional doping of boron and phosphours dopants. Proper regulation of technological parameters, Ts and r. f. power, can result in a mode transformation from amorphous morphology into microcrystalline or polysilicon like one. The crystallization of amorphous silicon film leads to a further reduction in its room-temperature resistivity by about three order of magnitude and a reduction in its activation energy of electrical conductivity.
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