Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Dopant Activation in Poly-SI/sub1-x/Ge/subx/ at Low Temperature

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Annealing behavior of Si1-xGex/Si heterostructure formed by Ge+ implantation with X-ray diffraction

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Formation of Si:CP Layer Through In-Situ Doping and Implantation Process for N-Type Metal–oxide–semiconductor Devices

Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time

Silicon implantation and annealing in β -Ga2O3: Role of ambient, temperature, and time

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Si Implantation in GaN at Elevated Temperatures

Optimum Annealing Conditions for Boron Implanted Sige Epilayers

Low-resistance phosphorus-doped Si films through blue laser diode annealing

Effects of Implantation Energy and Annealing Temperature on the Structural Evolution of Ge+-implanted Amorphous Si

Effects of High Temperature Post-Annealing on the Properties of Solution-Based Metal-Induced Crystallized Polycrystalline Silicon Films

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer