Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Optimum Annealing Conditions for Boron Implanted Sige Epilayers

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

X ray diffraction study of heavily boron doped Si epilayer after rapid thermal annealing

Dopant Activation In Poly-Si1-Xgex At Low Temperature

STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING

Effect of Rapid Thermal Annealing on the Strain Relaxation in Heavily Boron-Doped Silicon Epitaxial Layer

Effects of Rapid Thermal Annealing on Electrical-Properties of Heavily-Doped Silicon Molecular-Beam-Epitaxial Layer with B2o3 Doping Source

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time

Silicon implantation and annealing in β -Ga2O3: Role of ambient, temperature, and time

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Surface roughening in ion implanted 4H-silicon carbide

Dopant Activation in Poly-SI/sub1-x/Ge/subx/ at Low Temperature

Physical Mechanism Underlying the Enhancement Effect of Carbon in Heavily Phosphorus-Doped Czochralski Silicon Substrate on Phosphorus Out-Diffusion Within N/n+ Epitaxial Wafer

A Low Temperature Silicon‐on‐Insulator Fabrication Process Using Si MBE on Double‐Layer Porous Silicon

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts

Simulation of interstitial diffusion of ion-implanted boron

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers