Abstract:Scanning electron beam annealing techniques have been applied to the study of diffusion of implanted arsenic and boron difluoride. Electron beam anneals over the time range 0-180s (at Tmax), with peak temperatures in the range 1100-1200°C have been performed on uniformly implanted samples. Controlled slow cooling has been performed for some samples. Direct sample temperature measurements were made using a dual-colour pyrometer under control of a microcomputer, which provided data-logging and feedback control of temperature. The accurate temperature control achieved using this system is important for realistic diffusion modelling. Measurement of the resulting chemical and electrical dopant profiles, using SIMS, RBS and spreading resistance methodshas shown the presence of non-equilibrium diffusion at short times [6]. Channelling RBS studies used to investigate the activation and clustering behaviour of arsenic during the first stages of these very rapid anneals is reported. Modelling of the arsenic diffusion occuring for a range of implant doses subjected to these anneals has been performed,applying avariety of models, including a dynamic clustering model. This dynamic clustering model, based upon an equilibrium cluster model and a measured de-clustering rate, has been shown previously to give good agreementwith experiment. Forthese experiments, a modified de-clustering coefficient was needed to model the diffusion occuring for a wider range of arsenic implants. A solution of the Poisson equation for the internal electric field has also been incorporated. DLTS techniques have been used to study the defects remaining in diodes fabricated using these implagts andanneals. Trap densities of <5×1010cm−3 and leakages of <2×10−9 A.cm2 at −5V have been measured for the best devices, similar tothose observed for control furnace anneals.

Effect of Rapid Thermal Annealing on the Strain Relaxation in Heavily Boron-Doped Silicon Epitaxial Layer

X ray diffraction study of heavily boron doped Si epilayer after rapid thermal annealing

Effects of Rapid Thermal Annealing on Electrical-Properties of Heavily-Doped Silicon Molecular-Beam-Epitaxial Layer with B2o3 Doping Source

STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING

Optimum Annealing Conditions for Boron Implanted Sige Epilayers

Study on solid-phase crystallization of B-doped a-Si:H film

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Sample Thickness Effect Of Thermal Vibration Correction Within X-Ray Dynamical Theory For Germanium-Doped Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

A Study of Diffusion, Clustering and Defects in As+ and Bf2+ Implanted Silicon During Scanning Electron Beam Annealing.

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Post-Growth Rapid Thermal Annealing Effect on Hydrogenated Amorphous Silicon Carbide Thin Film

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Boron Deactivation In Heavily Boron-Doped Czochralski Silicon During Rapid Thermal Anneal: Atomic Level Understanding

Thermal Relaxation Behaviour of As in Supersaturated Si Studied by Channeling, Hall Effect Measurements and Transmission Electron Microscopy

Enhancement of Oxygen Precipitation in Czochralski Silicon Wafers by High-Temperature Anneals

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscope