Abstract:Ge-rich SiGe thin films were epitaxially grown on Si (100) substrate by reactive thermal chemical vapor deposition. Germanium tetrafluoride (GeF4) was selected as the Ge source material and disilane (Si2H6) is used as the reductant gas. By designing the surface reaction, high quality Ge-rich Si1-xGex epilayers were prepared under low temperature (350 degrees C) conditions. Effect of hydrogen annealing on the microstructure and electrical property was studied. The results reveal that the surface morphology of SiGe epilayer deteriorates drastically if the annealing temperature is higher than 700 degrees C. The optimal annealing temperature is found to be 650 degrees C. Under this condition, the threading dislocation density decreases from 3.7 X 10(6) cm(-2) to 4.3 X 10(5) cm(-2) and the surface root mean square roughness is also slightly decreased from 1.27 nm to 1.18 nm. Simultaneously, the crystalline quality of the SiGe epilayers is effectively improved. Carrier mobility of the annealed samples, measured by Hall-effect equipment, is enhanced obviously as compared to that of the as-deposited samples. These results suggest that the properties of the annealed SiGe thin, films, epitaxially grown by reactive thermal chemical vapor deposition at low-temperature, can be comparable to those of SiGe epilayers grown by high-temperature techniques.

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Ge Thin Films on Si Substrate and Thermal Annealing Effect on Their Properties

Thermal stability of SiGe films on an ultra thin Ge buffer layer on Si grown at low temperature

Retardation of strain relaxation in Si/SiGe/Si heterostructures during high temperature oxidation

Characterization Of Strained Si/Si1-Xgex/Si Heterostructures Annealed In Oxygen Or Argon

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate

Strain relaxation in SiGe layer during wet oxidation process

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Effcet of Annealing on Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum Chemical Vapor Deposition

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

Strain Evolution of SiGe-on-insulator Fabricated by Germanium Condensation Method with Over-Oxidation

Effect of thermal annealing on defects of upgraded metallurgical grade silicon

Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation

Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

Kinetics of Thermal Annealing in Strained Ultrathin Si/Ge Superlattices on Vicinal Si(100) Studied by Raman Scattering

Studies of Morphological Instability and Dislocation Formation in Heteroepitaxial Si1−xGex Thin Films Via Controlled Annealing Experiments

Annealing behavior of Si1-xGex/Si heterostructure formed by Ge+ implantation with X-ray diffraction

A Novel Three-Layer Graded SiGe Strain Relaxed Buffer for the High Crystal Quality and Strained Si0.5Ge0.5 Layer Epitaxial Grown