Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Cross-Sectional Transmission Electron Microscopy Study of Si/Sige Heterojunction Bipolar Transistor Structure Grown by Ultra-High Vacuum Chemical Vapor Deposition

On the Intrinsic Spacer Layer in Si/SiGe Heterojunction Bipolar Transistor Grown by Ultra High Vacuum Chemical Vapor Deposition

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

Epitaxy of SiGe HBT Structure by High Vacuum/Rapid Thermal Processing／Chemical Vapor Deposition

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

The growth and quality evaluation of strained Si material with multilayer structure

Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Structural stability of SiGe/Si strained-layer superlattices

UHV/CVD n--type silicon epitaxy used for SiGe HBT device

A Novel Strained Si Channel Heterojunction pMOSFET

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Study of Strain in Si1-x-yGexCy Alloys Grown by Ultra-high Vacuum／Chemical Vapor Depostion

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Transmission electron microscopy and secondary ion mass spectrometry study of n-Si/i-p+-i SiGe/n-Si structures grown by ultrahigh vacuum chemical vapor deposition