Abstract:Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum covering infrared to terahertz wavelengths. However, the epitaxial growth of these heterostructures at a thickness of a few micrometers has been a challenging task due to the lattice mismatch and its associated instabilities resulting from the formation of growth defects. To elucidate these limits, we outline herein a process for the strain-balanced growth on silicon of 11.1/21.5 nm Ge/Si 0.18 Ge 0.82 superlattices (SLs) with a total thickness of 16 μ m corresponding to 500 periods. Composition, thickness, and interface width are preserved across the entire SL heterostructure, which is an indication of limited Si–Ge intermixing. High crystallinity and low defect density are obtained in the Ge/Si 0.18 Ge 0.82 layers; however, the dislocation pileup at the interface with the growth substrate induces micrometer-long cracks on the surface. This eventually leads to significant layer tilt in the strain-balanced SL and in the formation of millimeter-long, free-standing flakes. These results confirm the local uniformity of structural properties and highlight the critical importance of threading dislocations in shaping the wafer-level stability of thick multi-quantum well heterostructures required to implement effective silicon-compatible Ge/SiGe photonic devices.

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Atomic‐scale Strain Analysis for Advanced Si/SiGe Heterostructure by Using Transmission Electron Microscopy

Study of strain distribution in GeSi/Si strained heterostructure

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Large Area and Depth-Profiling Dislocation Imaging and Strain Analysis in Si/Sige/Si Heterostructures

H DISTRIBUTION AND STRAIN EVOLUTION IN SiGe/Si HETEROSTRUCTURE IMPLANTED BY H DIMERS

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Strain Relaxation of Si0.75ge0.25 in Hydrogen-Implanted Si0.75ge0.25/B-Doped Si0.70ge0.30/Si Heterostructure

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)

Molecular Beam Epitaxy of High Mobility Silicon, Silicon Germanium and Germanium Quantum Well Heterostructures