Abstract:Strain serves as a powerful freedom to effectively, reversibly, and continuously engineer the physical and chemical properties of two-dimensional (2D) materials, such as bandgap, phase diagram, and reaction activity. Although there is a high demand for full characterization of the strain vector at local points, it is still very challenging to measure the local strain amplitude and its direction. Here, we report a novel approach to monitor the local strain vector in 2D molybdenum diselenide (MoSe2) by polarization-dependent optical second-harmonic generation (SHG). The strain amplitude can be evaluated from the SHG intensity in a sensitive way (-49% relative change per 1% strain); while the strain direction can be directly indicated by the evolution of polarization-dependent SHG pattern. In addition, we employ this technique to investigate the interlayer locking effect in 2H MoSe2 bilayers when the bottom layer is under stretching but the top layer is free. Our observation, combined with ab initio calculations, demonstrates that the noncovalent interlayer interaction in 2H MoSe2 bilayers is strong enough to transfer the strain of at least 1.4% between the bottom and top layers to prevent interlayer sliding. Our results establish that SHG is an effective approach for in situ, sensitive, and noninvasive measurement of local strain vector in noncentrosymmetric 2D materials.

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Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

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Optical properties of Ge/Si quantum dot superlattices

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Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Strain Engineering for Germanium-on-Insulator Mobility Enhancement with Phase Change Liner Stressors*

Strain effect analysis on the electrical conductivity of Si/Si 1-xGex nanocomposite thin films

Experimental Analyses on Multiscale Structural and Mechanical Properties of Ε-Si/gesi/c-si Materials

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice