Abstract:Two-dimensional material indium selenide (InSe) has offered a new platform for fundamental research in virtue of its emerging fascinating properties. Unlike 2H-phase transition-metal dichalcogenides (TMDs), ε phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers, and predicted to have a strong second harmonic generation (SHG) effect. In this work, we find that the as-prepared pure InSe, alloyed InSe1- xTe x and InSe1- xS x ( x = 0.1 and 0.2) are ε phase structures and exhibit excellent SHG performance from few-layer to bulk-like dimension. This high SHG efficiency is attributed to the noncentrosymmetric crystal structure of the ε-InSe system, which has been clearly verified by aberration-corrected scanning transmission electron microscopy (STEM) images. The experimental results show that the SHG intensities from multilayer pure ε-InSe and alloyed InSe0.9Te0.1 and InSe1- xS x ( x = 0.1 and 0.2) are around 1-2 orders of magnitude higher than that of the monolayer TMD systems and even superior to that of GaSe with the same thickness. The estimated nonlinear susceptibility χ(2) of ε-InSe is larger than that of ε-GaSe and monolayer TMDs. Our study provides first-hand information about the phase identification of ε-InSe and indicates an excellent candidate for nonlinear optical (NLO) applications as well as the possibility of engineering SHG response by alloying.

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Near-Infrared Femtosecond Laser for Studying the Strain in $\Hbox{si}_{1\hbox{-}{\Rm X}}\hbox{ge}_{\rm X}$ Alloy Films Via Second-Harmonic Generation

Near-Infrared Femtosecond Laser for Studying the Strain in <formula formulatype="inline"> <tex Notation="TeX">$\hbox{Si}_{1\hbox{-}{\rm x}}\hbox{Ge}_{\rm x}$</tex></formula> Alloy Films via Second-Harmonic Generation

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Strain at Native ${\rm SiO}_{2}/{\rm Si}(111)$ Interface Characterized by Strain-Scanning Second-Harmonic Generation

Enhancement of second-harmonic generation from silicon stripes under external cylindrical strain.

Precise Measurement of Weak Strain by Second-Harmonic Generation from Silicon (111) Surface

X-ray Study of Strain and Composition of Si∕Ge0.85Si0.15(111) Islands Grown in Volmer-Weber Mode

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Monitoring Local Strain Vector in Atomic-Layered MoSe2 by Second-Harmonic Generation

Characterization of Excimer Laser Annealed Polycrystalline Si1−xGex Alloy Thin Films by X-Ray Diffraction and Spectroscopic Ellipsometry

Investigation of strain and thin film relaxation in Ge xSi 1-x/Si strained-layer superlattice by dark-field electron holography

Investigation of Strain and Thin Film Relaxation in GexSi1−x/Si Strained-Layer Superlattice by Dark-Field Electron Holography

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing

Uniaxial Strain Dependence on Angle-Resolved Optical Second Harmonic Generation from a Few Layers of Indium Selenide

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

Strains in Si Substrate Induced by Formation of Ge Islands

Optoelectronic Properties for the Compressively Strained Ge1−xSnx Films Grown on Ge(004)