Abstract:We study the behavior of Ge–Ge, Ge–Sn, and Sn–Sn vibrational modes in GeSn semiconductors with Raman Spectroscopy. Raman spectroscopy is a rapid, nanoscale spatial resolution and non-destructive approach to accurately determine the composition and strain information of GeSn, and it is thus crucial for the material investigation and device application of GeSn alloys. By using several excitation wavelengths at 532, 633 and 785 nm on a set of fully strained and fully relaxed Ge1-xSnx layers with the Sn composition in the range 2.3 % < x Sn < 31 %, all modes are identified and their evolution as a function of strain and Sn content is determined. The Raman shifts of all vibrational modes are found to exhibit the same function versus the composition x Sn and in-plane strain ε//, Δω = ω GeSn - ω Ge = ax Sn + bε//, where a is the Sn composition factor and b is the strain shift factor. In addition, the Ge–Sn mode intensity increases with Sn content. It is discovered for the first time that the Sn composition determined from the plot of the intensity ratio of the Ge–Sn mode over the Ge–Ge mode as a function of Sn composition at 785 nm excitation agrees well with that the X-ray Diffraction (XRD) Reciprocal Space Mapping (RSM), offering a novel approach for determining Sn content by Raman spectroscopy.

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Raman spectra study of strained SiGe alloys

Determination of Raman Phonon Strain Shift Coefficient of Strained Silicon and Strained SiGe

Raman-Study Of Strained Sige Layers

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate

Raman Spectra of Relaxation and Thermal Stress in High Ge Content SiGe alloy

A Method to Estimate the Strain State of SiGe/Si by Measuring the Bandgap

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Near-Infrared Femtosecond Laser for Studying the Strain in <formula formulatype="inline"> <tex Notation="TeX">$\hbox{Si}_{1\hbox{-}{\rm x}}\hbox{Ge}_{\rm x}$</tex></formula> Alloy Films via Second-Harmonic Generation

Compressive and Tensile Strain Effects on Atomic Distribution in Strained Si-Ge Alloys

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

X-ray Study of Strain and Composition of Si∕Ge0.85Si0.15(111) Islands Grown in Volmer-Weber Mode

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Near-Infrared Femtosecond Laser For Studying The Strain In Si1-Xgex Alloy Films Via Second-Harmonic Generation

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Strain study of partially relaxed Ge epilayers on Si (100) substrate

X-Ray and Raman Characterization of Strained Sige Layers Treated by Stain Etching