Abstract:Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The photoluminescence emission was characterized by typical zero-phonon, phonon-assisted, and dislocations-related emissions, which are dependent on Ge composition x. However, luminescence spectra exhibited above band-gap features, which are likely associated with the presence of Si-rich regions in the alloys. The results are correlated with light-scattering tomography, revealing the presence of dislocations and Si precipitates. The excess peak at 519 cm^{-1} in Ge-rich samples is supportive of this observation. At low Ge content, a dislocation-related band (D2 line) at 14,204 {\AA} dominates D-band emission for x < 0.25 while overall D-band emission intensity decreases with x. Hydrogenation was found to enhance D-band emission, indicating a passivation of nonradiative recombination centers inside dislocation cores. Si-Si, Si-Ge, and Ge-Ge phonons (TO, TA, and LA), which are participating in luminescence emission, evolve with increasing Ge content and Ge-Ge and Si-Ge TO lines dominate the Raman spectrum to the detriment of the Si-Si TO phonon line. Raman spectra reveal the presence of alloy fluctuations and possible presence of Ge particles, particularly in Ge-rich samples.

Raman Spectra of Relaxation and Thermal Stress in High Ge Content SiGe alloy

Raman spectra study of strained SiGe alloys

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Recent Advances in Research and Development on Preparation and Properties of SiGeC Alloys

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Raman-Study Of Strained Sige Layers

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

X-Ray and Raman Characterization of Strained Sige Layers Treated by Stain Etching

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

The Property of Si／SiGe／Si Heterostructure During Thermal Budget Characterized by HRXRD

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Strain-engineering on GeSe: Raman spectroscopy study

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Raman Spectra As A Measure of Interface Alloying for Iv/Iv Superlattices

Structural stability of SiGe/Si strained-layer superlattices