Abstract:Raman light scattering, low-temperature photoluminescence, light-scattering tomography, and hydrogenation were used to investigate optical properties of defects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. The photoluminescence emission was characterized by typical zero-phonon, phonon-assisted, and dislocations-related emissions, which are dependent on Ge composition x. However, luminescence spectra exhibited above band-gap features, which are likely associated with the presence of Si-rich regions in the alloys. The results are correlated with light-scattering tomography, revealing the presence of dislocations and Si precipitates. The excess peak at 519 cm^{-1} in Ge-rich samples is supportive of this observation. At low Ge content, a dislocation-related band (D2 line) at 14,204 {\AA} dominates D-band emission for x < 0.25 while overall D-band emission intensity decreases with x. Hydrogenation was found to enhance D-band emission, indicating a passivation of nonradiative recombination centers inside dislocation cores. Si-Si, Si-Ge, and Ge-Ge phonons (TO, TA, and LA), which are participating in luminescence emission, evolve with increasing Ge content and Ge-Ge and Si-Ge TO lines dominate the Raman spectrum to the detriment of the Si-Si TO phonon line. Raman spectra reveal the presence of alloy fluctuations and possible presence of Ge particles, particularly in Ge-rich samples.

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Raman spectra study of strained SiGe alloys

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Raman-Study Of Strained Sige Layers

Raman Spectra of Relaxation and Thermal Stress in High Ge Content SiGe alloy

Compressive and Tensile Strain Effects on Atomic Distribution in Strained Si-Ge Alloys

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Phonon-Spectra Of Strained Si And Ge

Determination of Ge-fraction-shift coefficients for Raman spectroscopy in all vibration modes investigated by single-crystalline bulk SiGe and its application to strain evaluation in SiGe film grown on substrate

Composition and strain effects on Raman vibrational modes of GeSn alloys with Sn contents up to 31 % grown by low-temperature molecular beam epitaxy

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Strain-engineering on GeSe: Raman spectroscopy study

Raman Spectra As A Measure of Interface Alloying for Iv/Iv Superlattices

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys

X-Ray and Raman Characterization of Strained Sige Layers Treated by Stain Etching

Raman Spectra and Strain Effects in Bismuth Oxychalcogenides

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

Phonon and Raman spectra: effect of interface diffusion of strained Si/Ge superlattices

Strain and Phonon Confinement in Self-Assembled Ge Quantum Dot Superlattices