Abstract:This paper describes a method using both reduced pressure chemical vapor deposition (RPCVD) and ultrahigh vacuum chemical vapor deposition (UHVCVD) to grow a thin compressively strained Ge film As the first step, low temperature RPCVD was used to grow a fully relaxed SiGe virtual substrate layer at 500 degrees C with a thickness of 135 nm, surface roughness of 0.3 nm, and Ge content of 77%. Then, low temperature UHVCVD was used to grow a high quality strained pure Ge film on the SiGe virtual substrate at 300 degrees C with a thickness of 9 nm, surface roughness of 0.4 nm, and threading dislocation density of similar to 10(5) cm(-2). Finally, a very thin strained Si layer of 1.5-2 nm thickness was grown on the Ge layer at 550 degrees C for the purpose of passivation and protection. The whole epitaxial layer thickness is less than 150 nm. Due to the low growth temperature, the two-dimensional layer-by-layer growth mode dominates during the epitaxial process, which is a key factor for the growth of high quality strained Ge films

Raman-Study Of Strained Sige Layers

Raman spectra study of strained SiGe alloys

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

X-Ray and Raman Characterization of Strained Sige Layers Treated by Stain Etching

Application of Raman Scattering to Study the Strain Distribution in SiGe Layers

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Study of Strain in Partially Relaxed Ge Epilayers on Si(100) Substrate

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Thin strain-relaxed SiGe grown by ultrahigh vacuum chemical vapor deposition

Study on the Strain in SiGeC Alloy Films Grown on Si Substrate by CVD

The growth and quality evaluation of strained Si material with multilayer structure

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

Raman Spectra of Relaxation and Thermal Stress in High Ge Content SiGe alloy

A study on the strain stability of Si/SiGe layer structure in a heterojunction bipolar transistor during thermal processing

Fabrication of Strained Ge Film Using a Thin SiGe Virtual Substrate

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

A New Method of Fabricating Strained Silicon Materials

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)