Abstract:Amorphous SiO x (a- SiO x ) films were deposited on single-crystal Si (c-Si) and fused quartz substrates by a plasma-enhanced chemical vapor deposition technique using SiH4–O2 mixtures. For stoichiometric films (a- SiO2) deposited on c-Si substrates, the observed stress is compressive, and its magnitude increases with increasing deposition rate or with decreasing deposition temperature T d. The elastic constant, deduced from the stress values for films on two different substrates, decreases with increasing T d between 100 and 300° C, and is constant independent of the deposition rate when T d is fixed at 300° C. It is found that there are close relationships among the stress, the Si–O stretching absorption, the buffered HF etch rate, the density of Si dangling bonds and the deposition rate. As a consequence, for stoichiometric films deposited at T d ≥300° C, it is concluded that the Si–O–Si bond angle decreases with increasing deposition rate, leading to a decrease in the peak frequency of the infrared absorption, and that films with higher deposition rates are more defective, showing relatively high compressive stress.

Stress Property Of Sige Alloy Deposited By Very Low Pressure Chemical Vapor Deposition

Stress in Amorphous Siox:H Films Prepared by Plasma-Enhanced Chemical Vapor Deposition

Influences of Deposition Temperature and Rate on Mechanical Stress of Electron Beam Deposited ZnSe Thin Films

Study of GeSi Alloy Deposition on Ge Substrate by Very Low-Pressure Chemical Vapor Deposition

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Growth Kinetics Study of Sige Alloys Deposited by Rapid Thermal Process, Very Low Pressure Chemical Vapor Deposition

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Raman-Study Of Strained Sige Layers

Strain Relaxation In Sige Virtual Substrate Characterized By High Resolution X-Ray Diffraction

Compressive and Tensile Strain Effects on Atomic Distribution in Strained Si-Ge Alloys

Raman spectra study of strained SiGe alloys

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

Stress-dependent Transformation of Interstitial Oxygen in Processed Ge-doped Cz-Si

Raman Spectroscopy of Strained GeSi Alloys Deposited on Ge Substrates

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Strain Relaxation Mechanisms and Local Structural Changes in Si_{1-x}$Ge_{x} Alloys

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Raman Spectra of Relaxation and Thermal Stress in High Ge Content SiGe alloy

Residual Stress in Amorphous and Nanocrystalline Si Films Prepared by PECVD with Hydrogen Dilution

Strain Relaxation in Graded SiGe Grown by Ultra-High Vacuum Chemical Vapor Deposition (UHVCVD)