Abstract:Epitaxial growth of Si/SiGe from hydride precursors has been well established as the preferred technique for preparation of ‘virtual substrate’ and active layers of heterojunction metal-oxide-semiconductor devices as well as other Si/SiGe heterojunction based device structures. This paper reviews briefly the role of hydrogen in the growth mechanisms and establishes the basic reaction pathways in the growth process. The surface related segregation of Ge and As are examined in the context of formation of sharp SiGe/Si heterojunctions and sharp doping profiles. The influence of the growth environment on these surface segregation processes are revealed by the extended rate equation based ‘two-site’ exchange model. The optimisation of growth conditions are clearly identified from the trend gathered from secondary ion mass spectrometry measurements. The strain relaxation process during the growth of virtual substrates often leads to bunching and a high density of threading dislocations and requires substantially thicker grading layers. Some preliminary work shows that incorporation of ‘stresser’ layers in the grading region substantially reduces these detrimental features enabling relatively thin grading layers to be used.

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Study of GeSi Alloy Deposition on Ge Substrate by Very Low-Pressure Chemical Vapor Deposition

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

Substrate Temperature and Ge Concentration Dependence of the Microstructure of Strained Si-Ge Alloys

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition

Growth Kinetics Study of Sige Alloys Deposited by Rapid Thermal Process, Very Low Pressure Chemical Vapor Deposition

The Growth and In-Situ Doping of SiGe/Si Strained Heterostructures by RTP/VLP-CVD

Growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Stress Property Of Sige Alloy Deposited By Very Low Pressure Chemical Vapor Deposition

Growth of Si1-x-yGexCy Alloy Layers on Si by Chemical Vapor Deposition Using Ethylene

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Simulation Model to Very Low Pressure Chemical Vapor Deposition of SiGe Alloy

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Effect of H2 on low temperature selective growth of Si1-xGex by UHV/CVD

Influence of C on Ge Incorporation in the Growth of Ge-rich Ge1−x−ySixCy Alloys on Si (100)

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Composition Analysis of Ge Graded Si<sub>1-x</sub>Ge<sub>x</sub> Alloy Films by Capacitance-Voltage Method

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

Chemical vapor deposition of Ge films on Si1-xGex:C buffers