Abstract:A great deal of interest is directed nowadays towards the development of innovative technologies in the field of quantum information and quantum computing, with emphasis on obtaining reliable qubits as building blocks. The realization of highly stable, controllable and accessible hole spin qubits is strongly dependent on the quality of the materials hosting them. Ultra-clean germanium/silicon-germanium heterostructures have been predicted and proven to be promising candidates and due to their large scalability potential, they are opening the door towards the development of realistic and reliable solid state, all-electric, silicon-based quantum computers. In order to obtain ultra-clean germanium/silicon-germanium heterostructures in a reverse grading approach, the understanding and control over the growth of Ge virtual substrates and thin films is key. Here, we present a detailed study on the growth kinetics, morphology, and crystal quality of Ge thin films grown via chemical vapor deposition by investigating the effects of growth temperature, partial pressure of the precursor gas and the use of Ar or H2 atmosphere. The presence of carrier gases catalyzes the deposition rate and induces a smoothening on the surfaces of films grown at low temperatures. We investigated the surface roughness and threading dislocation density as a function of deposition temperature, partial pressure and gas mixture. Ge thin films deposited by diluting GeH4 in Ar or H2 were employed as virtual substrates for the growth of full Ge/SiGe QW heterostructures. Their defect density was analyzed and their electric transport properties were characterized via Hall measurements. Similar results were obtained for both carrier gases used.

Sige : H Thin Films Prepared By Plasma Assisted Reactive Thermal Chemical Vapor Deposition

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate

Very High Hydrogen Dilution Induced Novel Phenomena of Electronic Transport Properties in Hydrogenated Microcrystalline Silicon-Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Ge Composition and Temperature-Dependence of the Deposition of Sige Layers

Deposition of SiGe alloys by SiH4 and GeH4 CVD reaction

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Device-grade A-Sige:H Alloys Prepared by Nanometer Deposition/h2 Plasma Annealing Method

SiH4 and GeH4 chemical vapor deposition of GeSi/Ge heterostructures

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

High-Quality A-Sige:H Produced by Nanometer Deposition and Hydrogen Plasma Annealing

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh Vacuum Chemical Vapor Deposition

Study on the Preparation and Properties of Hydrogenated Amorphous Germanium Silicon Deposited in Argon Environment