High temperature annealing of hydrogenated amorphous silicon carbide thin films
Yihua Wang,Jianyi Lin,Cheng Hon Alfred Huan,Zhe Chuan Feng,Soo Jin Chua
DOI: https://doi.org/10.1016/s0040-6090(00)01867-8
IF: 2.1
2001-03-01
Thin Solid Films
Abstract:Hydrogenated amorphous silicon carbide thin films were prepared by plasma-enhanced chemical vapor deposition on Si substrate at 220°C with a rf power of 50 W, the high temperature annealing effect on these films was investigated. A wide range of techniques was used to study crystal structure, and relative C/Si content of the films. Nearly stoichiometric polycrystalline 3C–SiC films were obtained from the Si-rich amorphous hydrogenated silicon carbide films after high temperature annealing in a vacuum at the temperatures above 1000°C. With increasing temperature, the polycrystalline film becomes statistically oriented along the (100) plane, but without any obvious epitaxial relation to the Si substrate.
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films