Gisaxs And Atr-Ftir Studies On Stress-Induced Microstructure Evolution Of A-Si:H Under H-2 Plasma Exposure

Zuo Ze-Wen,Cui Guang-Lei,Wang Yu,Wang Jun-Zhuan,Pu Lin,Shi Yi
DOI: https://doi.org/10.1088/0256-307X/29/10/106801
2012-01-01
Chinese Physics Letters
Abstract:Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H-2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy. Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction. High-pressure H-2 in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si: H film, which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si-Si bonds.
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