Abstract:Hydrogen, introduced into crystalline (c-) or amorphous (a-) silicon (Si), plays an important role in improving Si properties for photovoltaics application. Low temperature proton implantation in c-Si and a-Si or H-doping of Si films introduces metastable hydrogen in the bond-centered-position (BCH), which dissociates with increasing temperatures into new metastable complexes. Using ab-initio molecular dynamics we report on the stability of BCH, a convenient hydrogen model system, in crystalline Si and its temperature-induced dissociation products in a wide temperature range, which includes temperatures close to solar cell operating conditions. Particular attention was paid to the newly experimentally discovered H2** dimer, and the H2* dimer, as well as isolated interstitial hydrogen and monohydrides. Each complex leaves a characteristic signature in the frequency spectrum, the density of states (DOS) and in the imaginary part of the dielectric constant that agrees well with experiments. All complexes modify the vicinity of the energy gap of pure c-Si. BCH introduces characteristic donor levels, causing a strong peak in the DOS just below the intrinsic conduction band. The Fermi energy is raised, filling these donor states with two electrons and causing a strong peak in the imaginary part of the dielectric constant in the infrared. The H2** and H2* dimers introduce a low energy tail in the imaginary part of the dielectric constant. The results are important for experimental in-situ optical characterization of Si film growth that often involves hydrogen.

Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

The Dissociated Amorphous Silica Surface: Model Development and Evaluation.

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

Structure and Electronic States in A-Si:H Thin Films

Effect of Hydrogen Radical Exposure on the Interfacial and Bulk Structure of A-Si:H/a-sinx:h Multilayer Films

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor deposition

Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

The role of hydrogen in amorphous silicon films deposited by the pyrolytic decomposition of silane

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Molecular dynamics simulations of the growth of thin amorphous hydrogenated carbon films on diamond surface

Numerical Simulation Study for Analysis of Hydrogenated Amorphous Silicon/Crystalline Silicon Heterostructure by Reactive Molecular Dynamics Method

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

On the growth mechanism of plasma deposited amorphous silicon thin films

Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing