Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

T. A. Abtew,F. Inam,D. A. Drabold

DOI: https://doi.org/10.1209/0295-5075/79/36001

2007-06-17

Abstract:We report first principles ab initio density functional calculations of hydrogen dynam- ics in hydrogenated amorphous silicon. Thermal motion of the host Si atoms drives H diffusion, as we demonstrate by direct simulation and explain with simple models. Si-Si bond centers and Si ring centers are local energy minima as expected. We also describe a new mechanism for break- ing Si-H bonds to release free atomic H into the network: a fluctuation bond center detachment (FBCD) assisted diffusion. H dynamics in a-Si:H is dominated by structural fluctuations intrinsic to the amorphous phase not present in the crystal.

Materials Science

What problem does this paper attempt to address?

This paper aims to solve the problems of thermally stimulated emission and diffusion mechanisms of hydrogen (H) in hydrogenated amorphous silicon (a - Si:H). Specifically, through first - principles density - functional - theory calculations, the paper explores the hydrogen - dynamic behaviors driven by the thermal motion of host silicon atoms in hydrogenated amorphous silicon materials. The paper pays special attention to the diffusion mechanisms of hydrogen at different temperatures and a new mechanism - Fluctuating Bond Center Detachment (FBCD) - assisted diffusion, which can explain how hydrogen breaks away from covalent bonds with silicon and freely moves in the material network or forms new silicon - hydrogen bonds. The main contribution of the paper lies in revealing that the dynamic lattice in the amorphous silicon network (especially the movement of silicon - atom pairs or triplets) plays a crucial role in the diffusion of hydrogen. This mechanism is different from the previous transition models based on static traps, but is directly determined from thermal molecular - dynamics simulations, emphasizing the influence of local - structure fluctuations on hydrogen dynamics. In addition, the paper also provides detailed simulation methods and result analyses to support its conclusions.

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