Abstract:Use of amorphous silicon ($a$-Si) and hydrogenated amorphous silicon ($a$-Si:H) in photovoltaics has been limited by light-induced degradation (the Staebler-Wronski effect) and low hole mobilities, and voids have been implicated in both problems. Accurately modeling the void microstructure is critical to theoretically understanding the cause of these issues. Previous methods of modeling voids have involved removing atoms according to an {\it a priori} idea of void structure and/or using computationally expensive molecular dynamics. We propose a new fast and unbiased approach based on the established and efficient Wooten-Winer-Weaire (WWW) Monte Carlo method, by using a range of fixed densities to generate equilibrium structures of $a$-Si and $a$-Si:H that maintain 4-coordination. We find a smooth evolution in bond lengths, bond angles, and bond angle deviations $\Delta \theta$ as the density is changed around the equilibrium value of $4.9\times10^{22}\ $atoms/cm$^3$. However, a significant change occurs at densities below $4.3\times10^{22}\ $atoms/cm$^3$, where voids begin to form to relieve tensile stress, akin to a cavitation process in liquids. We find both small voids (radius $\sim$3 Å) and larger ones (up to 7 Å), which compare well with available experimental data. The voids have an influence on atomic structure up to 4 Åbeyond the void surface and are associated with decreasing structural order, measured by $\Delta\theta$. We also observe an increasing medium-range dihedral order with increasing density. Our method allows fast generation of statistical ensembles, resembles a physical process during experimental deposition, and provides a set of void structures for further studies of their effects on degradation, hole mobility, two-level systems, thermal transport, and elastic properties.

Defects and Microvoids in A-Si and A-Si:H

Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon

Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

Oxygen-related Vacancy-Type Defects in Ion-Implanted Silicon

Vacancy-type Defects in Large-Dose Neutron-Irradiated Silicon Containing Hydrogen

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

Analysis of single and composite structural defects in pure amorphous silicon: A first-principles study

Electronic-Structure of Hydrogen-Vacancy Complexes in Crystalline Silicon - A Theoretical-Study

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Computational generation of voids in $a$-Si and $a$-Si:H by cavitation at low density

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Thermally stimulated H emission and diffusion in hydrogenated amorphous silicon

Resonant Raman Scattering in Hydrogenated Amorphous Silicon Films

Dynamical, Vibrational, Electronic and Optical Properties in c-Si:H with Bond-Centered-Hydrogen, H Dimers and Other H Complexes

Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Defect State Density and Orbital Localization in a-Si:H/c-Si Heterojunction and the Role of H

Nmr-Studies of Hydrogen Microstructures in Hydrogenated Amorphous-Silicon Films

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface