Abstract:Single crystals of silicon grown in an argon atmosphere were irradiated with three different neutron doses: 6 x 10(16), 3.6 x 10(17) and 1.2 x 10(18) cm-2. Positron annihilation spectroscopy indicates that there are two distinct annealing stages of V-type defects in the three neutron-irradiated silicon samples: one at about 200-degrees-C and another at about 500-degrees-C. The former is due to the annealing out of P-V and (V2-O)- complexes; the latter is due to the annealing out of (V2-O)0 complexes. For samples.irradiated with two different higher neutron doses, the intensity due to the radiation-induced monovacancy-type defects is above 58% and disappears at 550-degrees-C; the intensity due to the radiation-induced divacancies is above 23%, increases above 200-degrees-C and disappears at 600-650-degrees-C. For the sample irradiated with a lower neutron dose the intensity due to the divacancies is only 7.3%, it disappears below 200-degrees-C, and no secondary divacancies appear. The intensity due to the secondary divacancies is highly dependent on the neutron dose. There are two annealing stages Of V2 -type defects at 150-200-degrees-C and about 600-degrees-C. The former is due to the approach of interstitial silicon atoms to divacancies localized in the cores of neutron-radiation-disordered regions, and the latter is due to annealing out of divacancies in the 'undisturbed' matrix of the silicon crystal and V3-O complexes. For samples irradiated with two different higher neutron doses, monovacancy-type defects with higher intensities appear again at 600-650-degrees-C, which indicates the nature of the '600-650-degrees-C acceptor'. Above 700-degrees-C, many dislocations with 231 ps less-than-or-equal-to tau less-than-or-equal-to 239 ps (sometimes both dislocations and monovacancy-type defects (240 ps less-than-or-equal-to tau less-than-or-equal-to 266 ps)), are formed, especially for samples irradiated with higher neutron doses.

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

Interaction of hydrogen with neutron-induced vacancy defects in Si

Vacancy-type Defects in Large-Dose Neutron-Irradiated Silicon Containing Hydrogen

A Positron Annihilation Study of Defects in Neutron Transmutation-Doped Float-Zone (Ar)-Si

DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Annealing Behavior of Defects in Neutron-Transmutation-Doped Floating Zone Si

Hydrogen-Defect Shallow Donors in Si

Characteristics of Positron Trapping at Defects in Neutron－irradiated Silicon Grown in Argon Atmosphere

Studies of defect states in the interface between SiO2 and a-Si:H films

Vacancy-Type Defects in Neutron-Irradiated Silicon

Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon

Positron Annihilation Study of Silicon Irradiated by Different Neutron Doses

The convergent effect of the annealing temperatures of electron irradiated defects in FZ silicon grown in hydrogen

Thermal stability of defects in plastically deformed silicon studied by positron lifetime spectroscopy

Defects in Tio2 Films on P(+)-Si Studied by Positron Annihilation Spectroscopy

Annealing Behaviour of Defects in Neutron Transmutation Doped Silicon

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Defect Annealing of Neutron-Irradiated Silicon Crystals

Defects and Microvoids in A-Si and A-Si:H

Characters of NTD FZ(H 2 ) Si Kept at Room Temperature for Three Years