Abstract:Single crystals of silicon grown in an argon atmosphere were irradiated with three different neutron doses: 6 x 10(16), 3.6 x 10(17) and 1.2 x 10(18) cm-2. Positron annihilation spectroscopy indicates that there are two distinct annealing stages of V-type defects in the three neutron-irradiated silicon samples: one at about 200-degrees-C and another at about 500-degrees-C. The former is due to the annealing out of P-V and (V2-O)- complexes; the latter is due to the annealing out of (V2-O)0 complexes. For samples.irradiated with two different higher neutron doses, the intensity due to the radiation-induced monovacancy-type defects is above 58% and disappears at 550-degrees-C; the intensity due to the radiation-induced divacancies is above 23%, increases above 200-degrees-C and disappears at 600-650-degrees-C. For the sample irradiated with a lower neutron dose the intensity due to the divacancies is only 7.3%, it disappears below 200-degrees-C, and no secondary divacancies appear. The intensity due to the secondary divacancies is highly dependent on the neutron dose. There are two annealing stages Of V2 -type defects at 150-200-degrees-C and about 600-degrees-C. The former is due to the approach of interstitial silicon atoms to divacancies localized in the cores of neutron-radiation-disordered regions, and the latter is due to annealing out of divacancies in the 'undisturbed' matrix of the silicon crystal and V3-O complexes. For samples irradiated with two different higher neutron doses, monovacancy-type defects with higher intensities appear again at 600-650-degrees-C, which indicates the nature of the '600-650-degrees-C acceptor'. Above 700-degrees-C, many dislocations with 231 ps less-than-or-equal-to tau less-than-or-equal-to 239 ps (sometimes both dislocations and monovacancy-type defects (240 ps less-than-or-equal-to tau less-than-or-equal-to 266 ps)), are formed, especially for samples irradiated with higher neutron doses.

Annealing Behavior of Defects in Neutron-Transmutation-Doped Floating Zone Si

Annealing Behaviour of Defects in Neutron Transmutation Doped Silicon

Vacancy-Type Defects in Neutron-Irradiated Silicon

A Positron Annihilation Study of Defects in Neutron Transmutation-Doped Float-Zone (Ar)-Si

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Defect Annealing of Neutron-Irradiated Silicon Crystals

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Characteristics of Positron Trapping at Defects in Neutron－irradiated Silicon Grown in Argon Atmosphere

Temperature Effects on Annealing Crucial Deep-Level Defects in Neutron-Irradiated Silicon: Multiscale Modeling

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

Positron Annihilation Study of Silicon Irradiated by Different Neutron Doses

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Interaction of hydrogen with neutron-induced vacancy defects in Si

Behavior of Irradiation Donor(id) Arer Annealing in Neutron Transmutation Doping Czochralski Grown Silicon

Vacancy-type Defects in Large-Dose Neutron-Irradiated Silicon Containing Hydrogen

Hydrogen-Defect Shallow Donors in Si

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Evolution of secondary defects in arsenic implanted Si