Abstract:Composite ceramics show great potential for utilization in nuclear systems. However, the component phases therein may exhibit large variations in structural response to the ion irradiation including degree of lattice expansion, ability to maintain the crystallinity, types and density of as-formed defects, etc. Such discrepancy may result in the evolution of internal stress and consequently more complicated interactions with respect to the irradiation behavior, which remains less understood. In this study, a ZrC–30 vol% SiC composite is chosen to study the irradiation and helium retention behavior under 540 keV He ion irradiation with a fluence of 1 × 10 17 /cm 2 and subsequent annealing at 1000 °C and 1500 °C. Irradiation-induced volume dilation of ZrC lattice and especially from an amorphization process of SiC leads to a maximum compressive stress of ~66 GPa at a certain irradiation depth, at which horizontal cracks are generated but only in ZrC grains. During high-temperature annealing, migration of defects, diffusion and coalesce of helium species, growth of He bubbles, recovery of crystal lattices and formation of dislocations are found to be closely correlated to the irradiation-induced gradient of helium retention concentration, lattice damage and internal stress along the irradiation depth along with the recrystallization process of amorphous SiC. The as-observed irradiation behavior and structural evolution during annealing are discussed by theoretical consideration of internal stress in the composite using the COMSOL Multiphysics package.

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Ion-irradiation-induced athermal annealing of helium bubbles in SiC

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

Ion Irradiation Induced Bubble Relaxation in SiC

Study of damage generation induced by focused helium ion beam in silicon

Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Enhancement of Room Temperature Dislocation-Related Photoluminescence of Electron Irradiated Silicon

Evolution of secondary defects in arsenic implanted Si

Evolution of structures and internal stress of ZrC-SiC composite under He ion irradiation and post-annealing

Correlation Between Oxygen Precipitation and Extended Defects in Czochralski Silicon: Investigation by Means of Scanning Infrared Microscopy

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Molecular dynamics simulation of silicon vacancy defects in silicon carbide by hydrogen ion implantation and subsequent annealing

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Microstructure evolution and performance degradation of sol-gel silica films induced by helium ion irradiation

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

Structural and Luminescent Properties of Electron-Irradiated Silicon