Abstract:Silicon carbide (SiC) is an important material used in semiconductor industries and nuclear power plants. SiC wafer implanted with H ions can be cleaved inside the damaged layer after annealing, in order to facilitate the transfer of a thin SiC slice to a handling wafer. This process is known as “ion-cut” or “Smart-Cut”. It is worth investigating the exfoliation efficiency and residual lattice defects in H-implanted SiC before and after annealing. In the present paper, lattice damage in the 6H-SiC implanted by H2+ to a fluence of 5 × 1016 H2+/cm2 at 450 and 900 °C was investigated by a combination of Raman spectroscopy and transmission electron microscopy. Different levels of damage caused by dynamic annealing were observed by Raman spectroscopy and transmission electron microscopy in the as-implanted sample. Atomic force microscopy and scanning white-light interferometry were used to observe the sample surface morphology. Surface blisters and exfoliations were observed in the sample implanted at 450 °C and then annealed at 1100 °C for 15 min, whereas surface blisters and exfoliation occurred in the sample implanted at 900 °C without further thermal treatment. This finding can be attributed to the increase in the internal pressure of platelets during high temperature implantation. The exfoliation efficiency, location, and roughness after exfoliation were investigated and possible reasons were discussed. This work provides a basis for further understanding and improving the high-efficiency “ion-cut” technology.

Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C

Thermal behavior of iron in 6H-SiC: Influence of He-induced defects

Experimental study on the thermal evolution of silicon defects with zonal characteristics induced by precisely localized irradiation of focused helium ion beams

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Evolution of secondary defects in arsenic implanted Si

Ion-irradiation-induced athermal annealing of helium bubbles in SiC

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6h Sic

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Temperature-Dependence of Aluminum Implanted 4H-SiC After High-Temperature Annealing

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Retention And Thermal Release Behavior Of Deuterium And Helium Implanted In Sic

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation