Abstract:In this work an extensive characterization over XeCl multishot laser irradiation was performed at different energy densities and with different thicknesses of graphitic coating superimposed on P and Al implanted 4H–SiC epitaxial layers. It was noted that at 0.6 J/cm2 the 180 nm coating provides a smooth surface unlike lower thicknesses or uncoated treatments. The μ-Raman investigation showed the crystalline quality as a function of the energy density. Through Medium Angle Annular Dark Field-Scanning Transmission Electron Microscopy (MAADF-STEM) and High Angle Annular Dark Field (HAADF)-STEM investigations, the absence of extended defects and the presence of regions with higher density of carbon interstitials (C i ) was revealed. Circular Transfer Length Method (CTLM) measurements demonstrated how irradiation at 0.9 J/cm2 succeeded to reach values of (7.28 ± 1.15) × 102 Ω/sq, lower than the findings achieved with furnace treatment at 1650 °C. However, electrical characterization carried out through μ-Raman investigation over the Folded Transverse Acoustic (FTA) modes showed consistent activation of the order of 7 × 1019 cm−3 at 0.6 J/cm2 while exhibited CTLM extracted sheet resistance of (3.17 ± 0.06) × 104 Ω/sq. Therefore, this work highlights the contrast between fast processes as the accommodation and ionization of dopant atoms in substitutional positions and slow processes such as the recovery of ion implantation damage. By offering faster processing rates, lower thermal budgets, and high spatial control over the annealing process, laser annealing on 4H–SiC as a post-implantation thermal treatment approach presents several advantages over conventional annealing methods. This study marks a significant progress in comprehending and improving the effectiveness of laser annealing on 4H–SiC.

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Optical Characterization of Ion-Implanted 4H-SiC

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

A Comparison Study of Mechanical Change and Chemical Disorder in 4H-Sic Irradiated with Si5+ and He2+ at Room Temperature

Lattice Defects and Exfoliation Efficiency of 6H-SiC via H2+ Implantation at Elevated Temperature

The Effect of Cavities on Recrystallization Growth of High-Fluence He Implanted-Sic

Microstructure Evolution of the Interface in SiCf/TiC-Ti3SiC2 Composite under Sequential Xe-He-H Ion Irradiation and Annealing Process

Al-implantation induced damage in 4H-SiC

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Crack Healing Behavior of 4H-Sic: Effect of Dopants

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

Effects of Self-Ion Implantation on the Thermal Growth of He-Induced Cavities in Silicon