Abstract:Background: As one of the most attractive materials for the first wall or structural materials in fusion reactors, silicon carbide (SiC) is subjected to strong heat flux, neutron radiation and the bombardment by energetic ions. However, defects in material will be induced by high temperature and high radiation. Purpose: The analysis of irradiation damage behavior in SiC is important for the development of fusion reactors. Methods: 6H-SiC were irradiated by 100-keV He+ at 600��C in doses of 5��1015 ions��cm-2, 1��1016 ions��cm-2, 3��1016 ions��cm-2 and 8��1016 ions��cm-2. Multi-mode scanning probe microscopy techniques, including tapping mode atomic force microscopy (AFM), and nano-indentation/scratch and conduction mode AFM techniques were used to analyze the irradiation damage. Results: He ion irradiation with the dose of 5��1015-1��1016 ions��cm-2 leads to an obvious change of surface topography. It can be clearly seen the surface swelling of irradiated samples. The surface roughness and root mean square roughness (RMS) value increased with increasing He+ doses. However, the nano hardness and scratching resistance decreased with increasing He+ doses. The distributions and morphologies of helium bubble could be clearly observed by conduction AFM. The surface swellings of the irradiated samples were mainly produced by the internal pressure of helium bubbles. Conclusion: We have performed multi-mode scanning probe microscopy techniques for detecting the He+ irradiated SiC samples. This technique can provide a comprehensive evaluation of irradiated fusion materials.

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Damage Effects in 6H-Sic Single Crystals by Si&H Dual Ion Irradiation: A Combined Raman and XRD Study

Damage Effects of Au&He Dual Ion Irradiated Silicon Carbide

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Irradiation damage in silicon carbide based on a multi-mode scanning probe microscope

A Comparison Study of Mechanical Change and Chemical Disorder in 4H-Sic Irradiated with Si5+ and He2+ at Room Temperature

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

Investigation of the damage behavior in SiC without any additives irradiated with Si ions by GIXRD, Raman and TEM

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

Ion Irradiation Induced Bubble Relaxation in SiC

Atomic-scale revealing defects in ion irradiated 4H-SiC