Abstract:For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 μm, 6 μm, and 7.5 μm, the average deviations of the Raman depth analysis were −1.7 μm, −1.2 μm, and −1.4 μm, respectively. Moreover, when moving the focal plane from the heavily doped sample (~1018 cm−3) to the epitaxial layer (~1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

Irradiation damage in silicon carbide based on a multi-mode scanning probe microscope

Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery

Atomic-scale revealing defects in ion irradiated 4H-SiC

A study of optical characteristics of damage in oxygen-implanted 6H-SiC

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Generalized damage profile function for subsurface damage in SiC induced by helium focused ion beam under line scanning at different energies and doses

Damage Effects in 6H-Sic Single Crystals by Si&H Dual Ion Irradiation: A Combined Raman and XRD Study

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Characterizations on the Doping of Single-Crystal Silicon Carbide

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Investigation of process-induced periodic structure on n -type 4H-SiC with corresponding mechanical characteristics estimation