Abstract:Silicon carbide (SiC) is a promising structural and cladding material for accident tolerant fuel cladding of nuclear reactor due to its excellent properties. However, when exposed to severe environments (e.g., during neutron irradiation), lattice defects are created in amounts significantly greater than normal concentrations. Then, a series of radiation damage behaviors (e.g., radiation swelling) appear. Accurate understanding of radiation damage of nuclear materials is the key to the design of new fuel cladding materials. Multi-scale computational simulations are often required to understand the physical mechanism of radiation damage. In this work, the effect of neutron irradiation on the volume swelling of cubic-SiC film with 0.3 mm was studied by using the combination of molecular dynamics (MD) and rate theory (RT). It was found that for C-vacancy (CV), C-interstitial (CI), Si-vacancy (SiV), Si-interstitial (SiI), and Si-antisite (SiC), the volume of supercell increases linearly with the increase of concentration of these defects, while the volume of supercell decreases linearly with the increase of defect concentration for C-antisite (CSi). Furthermore, according to the neutron spectrum of a certain reactor, one RT model was constructed to simulate the evolution of point defect under neutron irradiation. Then, the relationship between the volume swelling and the dose of neutrons can be obtained through the results of MD and RT. It was found that swelling typically increases logarithmically with radiation dose and saturates at relatively low doses, and that the critical dose for abrupt transition of volume is consistent with the available experimental data, which indicates that the rate theory model can effectively describe the radiation damage evolution process of SiC. This work not only presents a systematic study on the relationship between various point defect and excess volume, but also gives a good example of multi-scale modelling through coupling the results of binary collision, MD and RT methods, etc., regardless of the multi-scale modelling only focus on the evolution of primary point defects.

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

Mechanical properties of 6H-SiC irradiated by neutron and MeV heavy ions: A nanoindentation and finite element method study

A Comparison Study of Mechanical Change and Chemical Disorder in 4H-Sic Irradiated with Si5+ and He2+ at Room Temperature

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Hardness variation in nanocrystalline SiC irradiated with heavy ions

Damage Effects in 6H-Sic Single Crystals by Si&H Dual Ion Irradiation: A Combined Raman and XRD Study

Atomic-scale revealing defects in ion irradiated 4H-SiC

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Investigation of the damage behavior in SiC without any additives irradiated with Si ions by GIXRD, Raman and TEM

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

Effects of ion irradiation on microstructures and mechanical properties of SiOC nanocomposites

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide

A Multi-Scale Simulation Study of Irradiation Swelling of Silicon Carbide

Crystalline-to-amorphous Transition in Silicon Carbide under Neutron Irradiation

Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon