Crystalline-to-amorphous Transition in Silicon Carbide under Neutron Irradiation

E. Z. Jin,L. S. Niu
DOI: https://doi.org/10.1016/j.vacuum.2011.05.013
IF: 4
2011-01-01
Vacuum
Abstract:We have investigated the neutron-induced amorphization in silicon carbide (SiC) film using molecular dynamics (MD) simulations with a modified Tersoff potential. The crystalline-to-amorphous (c-a) transition occurs at about 0.27 dpa along with a structural relaxation, indicating that the amorphization mechanism of neutron-irradiated 3C-SiC is homogeneous. The amorphization level will further be improved during more irradiation, which could be deduced from the increase of C-C bonds and decrease of C-Si bonds after c-a transition. The point defects tend to accumulate in defect-rich areas with C-depleted regions in the core and C-rich regions in the boundary. Such defect-rich areas caused by the displacement spikes results in the local inhomogeneity of C and Si atom distribution in the system, which will enhance the driving force for c-a transition based on thermodynamics. Evidences suggest that the displacement spike plays an important role in amorphization of 3C-SiC. (C) 2011 Elsevier Ltd. All rights reserved.
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