Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

Understanding the Changes in Mechanical Properties Due to the Crystalline-to-amorphization Transition in SiC

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Atomistic Investigations of Single-Crystal Silicon with Pre-Existing Defects

A Crossover in the Mechanical Response of Silicon Carbide Due to the Accumulation of Chemical Disorder

Wear Behaviour and Microstructural Changes of SiCw-Al Composite under Unlubricated Sliding Friction

Grain boundary effects on chemical disorders and amorphization-induced swelling in 3C-SiC under high-temperature irradiation: from atomic simulation insight

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Crystalline-to-amorphous Transition in Silicon Carbide under Neutron Irradiation

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Effect of the point defect of silicon carbide cladding on mechanical properties: a molecular-dynamics study

Atomistic simulations of structural relaxation process in amorphous silicon carbide

Influence of Reinforcement with Multimodal Distribution on Thermophysical Properties and Fracture Behavior in Al-Si/SiC Composites Infiltrated under Super-Gravity Field

Atomistic details of grain, crack, and notch effect on the mechanical behavior and fracture mechanisms of monolayer silicon carbide

Anomalous tension–compression asymmetry in amorphous silicon: insights from atomistic simulations and elastoplastic constitutive modeling

Driving mechanism of neutron-irradiation-induced amorphization in silicon carbide

Mechanical Load-Induced Atomic-Scale Deformation Evolution and Mechanism of SiC Polytypes Using Molecular Dynamics Simulation

Mechanical properties of Si(1−x)–C(x): strength and stiffness of materials using LAMMPS molecular dynamics simulation

Effects Of Quench Rates On The Short- And Medium-Range Orders Of Amorphous Silicon Carbide: A Molecular-Dynamics Study

On the deformation mechanism of SiC under nano-scratching: An experimental investigation