Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

Effects Of Quench Rates On The Short- And Medium-Range Orders Of Amorphous Silicon Carbide: A Molecular-Dynamics Study

Atomistic simulations of structural relaxation process in amorphous silicon carbide

Electronic Transport Properties of Silicon Carbide Molecular Junctions: First-Principles Study

Understanding the Changes in Mechanical Properties Due to the Crystalline-to-amorphization Transition in SiC

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Icosahedral Short-Range Order in Amorphous Cu80Si20 by Ab Initio Molecular Dynamics Simulation Study

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Effects of Atomic Ratio on the Mechanical Properties of Amorphous Silicon Carbon Nitride

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Molecular Dynamics Simulations of the Effect of Carbon Concentration on Silicon Carbide Crystal Growth

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

A Crossover in the Mechanical Response of Silicon Carbide Due to the Accumulation of Chemical Disorder

Electronic structure of amorphous silicon carbide compounds

Structural properties of hydrogenated amorphous silicon carbide alloys

Enhanced heat transport in amorphous silicon via microstructure modulation

Density modified structure and mechanical properties of amorphous Si2BC3N by ab‐initio molecular dynamics calculations

Effects of different incidence rates of carbon and silicon clusters on the surface properties of SiC films

Grain boundary effects on chemical disorders and amorphization-induced swelling in 3C-SiC under high-temperature irradiation: from atomic simulation insight

Topological modeling of amorphization in SiC nodal network structures using local rules

Bonding Nature, Structural Optimization, and Energetics studies of SiC Graphitic-Like layer Structures and Single/Double Walled Nanotubes