Abstract:Silicon carbide (SiC) is a wide-bandgap (WBG) semiconductor material, and its preparation process has strict requirements on the purity of raw materials. A self-developed medium-frequency induction heating furnace was used to carry out powder heat treatment and purification experiments on SiC powder to improve the purity of the powder. Samples with 3.5N purity were analyzed using XRD and GDMS characterization methods. It was found that under conditions of high-temperature (2200 °C) and long-time (50 h) processing, the impurity removal effect was quite good, but the powder loss was as high as 53.42%. The powder loss during the low-temperature (less than 2050 °C) and short-time process was less than 1.5%, but the purification effect was not substantial. After a prolonged processing time, the purification effect of low-temperature heat treatment conditions was improved, but the powder loss was also increased to 30%. In contrast, segmented purification processing at a low temperature in the early stage and a high temperature in the later stage achieved a good purification effect. On the premise of maintaining the utilization rate of raw materials, a 5N-purity SiC source was successfully prepared. The test results show that the contents of free Si, free C and free oxygen impurities were reduced to less than 0.01%, and the contents of Al, B, Fe, Mg, Na, Ti and other impurities were less than 1.15 ppm, which is close to the ppb level.

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Synthesis of nanocrystalline silicon carbide powders

Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth

Rapid Synthesis of SiC Powders by Spark Plasma-Assisted Carbothermal Reduction Reaction

Sintering of ultrafine SiC powders prepared by plasma CVD

Large-scale Synthesis of Monodisperse SiC Nanoparticles with Adjustable Size, Stoichiometric Ratio and Properties by Fluidized Bed Chemical Vapor Deposition

Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

Thermal CVD synthesis and characterization of silicon nanopowders

Preparation Of Nanocrystalline Silicon Carbide Powders By Carbothermal Reduction

Study on Purification Technology of Silicon Carbide Crystal Growth Powder

The structure of chemical vapor deposited silicon carbide

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system

Low temperature synthesis and formation mechanism of dense SiC coating layer by fluidized bed chemical vapor deposition

Combustion Synthesis of Nanosized Β-Sic Powder on a Large Scale

In-situ synthesis of nano SiC particles in Al–Si–C system at 750 °C

Syntheses and Growth Mechanisms of 3C-Sic Nanostructures from Carbon and Silicon Powders.

Controlled growth of SiC crystals in combustion synthesis

Synthesis and characterization of submicron silicon carbide powders with silicon and phenolic resin

Synthesis of SiC-AlN Ceramic Alloy Powder by the Direct Reactions Between the Constituent Elements.

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation