Sintering of ultrafine SiC powders prepared by plasma CVD

K. Kijima,H. Noguchi,M. Konishi
DOI: https://doi.org/10.1007/bf02385649
IF: 4.5
1989-08-01
Journal of Materials Science
Abstract:Ultrafine SiC powders with a nanometre particle size were synthesized by r.f. plasma chemical vapour deposition (CVD) using a chemical system of SiH4−C2H4−Ar. The powder was also ultrapure with a grade of 99.999% purity. The product was polytype 3C−SiC and black in colour, in spite of its high purity, because of its ultrafine size. Silicon carbide is a difficult ceramic to sinter; it is possible to sinter it to full density with the aid of sintering additives. Ultrafine and ultrapure SiC powders were hot-pressed without sintering additives in the present study, in order to investigate the sintering behaviour. The CVD powders proved sinterable to 88% theoretical density without sintering additives. The present experiments revealed that powder treatment before firing was a key technology when using ultrafine powders as starting materials in the sintering process. The sintering behaviour of the powder was characterized by a large shrinkage. Phase transformation was negligible after hot pressing at 2200°C for 30 min.
materials science, multidisciplinary
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