Abstract:During plasma spraying, SiC particles undergo sublimation, accompanied by the sublimation and decomposition of Si and C atoms in the crystal lattice. Ultimately, the deposited SiC either spreads splash or breaks apart on the surface of the carbon‐carbon composite matrix. It is widely known that silicon carbide (SiC) is challenging to thermal spray. However, the nature of deposition and the underlying mechanisms are still not clearly understood. In the current work, the process of atmospheric plasma‐sprayed SiC was investigated in detail. SiC exhibits sublimation severely under the plasma spraying (PS). More than 65 mol.% SiC particles lost by sublimation during PS estimated by calculation. Due to the nonuniformity of temperature in plasma flame, a small amount of SiC particles was retained. Moreover, a small amount of Si and SiO2 was experimentally observed after deposition process from the single‐splat characterization. According to the first‐principles calculations, the detachment energy of C atom from the lattice (0.591 eV) is lower than that of Si atom (1.257 eV). The adsorption energies of an O atom on the Si‐ and C‐terminated surfaces are −9.549 and −7.631 eV, respectively. Therefore, C is more likely to form gaseous products after decomposition, and Si is more likely to be retained to form Si and SiO2. Mullite was found on the grain boundaries of molten Si, which was attributed to the rapid diffusion of the Al2O3 substrate along the grain boundaries of Si, promoting the spreading of molten splats. It is difficult to stack particles through self‐diffusion among SiC particles to form coatings. The discovery on thermal deposition mechanism of SiC in PS is helpful to promote the practical application of SiC coatings on preparation optimization and interfacial bonding improvement.

The structure of chemical vapor deposited silicon carbide

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Experimental Phase Diagram of SiC in CH3SiCl3–Ar–H2 System Produced by Fluidized Bed Chemical Vapor Deposition and Its Nuclear Applications

The Formation and Crystal Structure of Silicon Carbide

Characterization of Silicon Carbide Films Prepared by Chemical Vapor Deposition

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Conformal and Stoichiometric Chemical Vapor Deposition of Silicon Carbide onto Ultradeep Heterogeneous Micropores by Controlling the Initial Nucleation Stage

Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Effect of substrates on the characteristics of silicon carbide deposited from methyltrichlorosilane

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

Numerical modeling of <i>SiC</i> by low-pressure chemical vapor deposition from methyltrichlorosilane

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

Novel chemical routes to silicon‐germanium‐carbon materials

Silicon carbide: from amorphous to crystalline material

Deposition behavior and mechanism of thermal sprayed SiC

Phase formation of cubic silicon carbide from reactive silicon–carbon multilayers

Thermodynamic Analysis of Chemical Vapor Deposition Process for SiC/SiO2 Graded Composite Coating

Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System