Abstract:During plasma spraying, SiC particles undergo sublimation, accompanied by the sublimation and decomposition of Si and C atoms in the crystal lattice. Ultimately, the deposited SiC either spreads splash or breaks apart on the surface of the carbon‐carbon composite matrix. It is widely known that silicon carbide (SiC) is challenging to thermal spray. However, the nature of deposition and the underlying mechanisms are still not clearly understood. In the current work, the process of atmospheric plasma‐sprayed SiC was investigated in detail. SiC exhibits sublimation severely under the plasma spraying (PS). More than 65 mol.% SiC particles lost by sublimation during PS estimated by calculation. Due to the nonuniformity of temperature in plasma flame, a small amount of SiC particles was retained. Moreover, a small amount of Si and SiO2 was experimentally observed after deposition process from the single‐splat characterization. According to the first‐principles calculations, the detachment energy of C atom from the lattice (0.591 eV) is lower than that of Si atom (1.257 eV). The adsorption energies of an O atom on the Si‐ and C‐terminated surfaces are −9.549 and −7.631 eV, respectively. Therefore, C is more likely to form gaseous products after decomposition, and Si is more likely to be retained to form Si and SiO2. Mullite was found on the grain boundaries of molten Si, which was attributed to the rapid diffusion of the Al2O3 substrate along the grain boundaries of Si, promoting the spreading of molten splats. It is difficult to stack particles through self‐diffusion among SiC particles to form coatings. The discovery on thermal deposition mechanism of SiC in PS is helpful to promote the practical application of SiC coatings on preparation optimization and interfacial bonding improvement.

Experimental Phase Diagram of SiC in CH3SiCl3–Ar–H2 System Produced by Fluidized Bed Chemical Vapor Deposition and Its Nuclear Applications

The structure of chemical vapor deposited silicon carbide

High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system

Low temperature synthesis and formation mechanism of dense SiC coating layer by fluidized bed chemical vapor deposition

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Large-scale Synthesis of Monodisperse SiC Nanoparticles with Adjustable Size, Stoichiometric Ratio and Properties by Fluidized Bed Chemical Vapor Deposition

Carbon - Silicon Heterojunction Diodes Formed by CH4/ Ar Rf Plasma Thin Film Deposition on Si Substrates

Preparation of Silicon Carbide Coating Layer by Fluidized Bed Chemical Vapor Deposition Using a Halogen-Free Precursor

Preparation, Performance and Nuclear Applications of Silicon Carbide Materials Prepared by FB-CVD Method

Preparation and Characterization of SiC Layer of Coated Fuel Particles for High-Temperature Gas-Cooled Reactor

Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

Thermodynamics on formation of condensed phases during CVD Si 3N 4 process with Sicl 4-NH 3-H 2 precursors

Continuous Preparation of SiC Nanowires Using Fluidized Bed Chemical Vapor Deposition Method

Numerical modeling of <i>SiC</i> by low-pressure chemical vapor deposition from methyltrichlorosilane

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Thermodynamics on Formation of Condensed Phases During CVD Si3N4 Process with Sicl4-NH3-H2 Precursors

Study on the High Speed Chemical Vapor Deposition for SiC Coating

Phase Reactions and Diffusion Path of the SiC/Cr System

Deposition behavior and mechanism of thermal sprayed SiC

Properties of SiC Coated Layer for HTGR Fuel Particles