Abstract:Single-crystalline and epitaxial cubic silicon carbide (beta-SiC) nano-thin films have been deposited on Si(100) substrates at a sample temperature of approximately 900 degrees C using single source precursors by the thermal metal-organic chemical vapor deposition (MOCVD) method. Diethylmethylsilane and 1,3-disilabutane, which contain Si and C atoms in the same molecule, were used as precursors without any carrier or bubbler gas. Upon increasing the deposition temperature from 900 to 950 degrees C, beta-SiC nano-thin films with relatively small crystals and smoother surfaces were created on Si(100) substrates. Moreover, beta-SiC nano-wires with 40 approximately 100 nm in diameter have also been grown selectively on nickel catalyzed Si(100) substrates with dichloromethylvinylsilane by the MOCVD method. The deposition temperature in this case was as low as 800 degrees C under the pressure of 5.0 x 10(-2) Torr. It is worth noting that the initial growth rates of deposited beta-SiC nano-thin films and nano-wires strongly depend on the deposition temperature rather than the time. In order to test the possibility of applications of these materials for electronic components such as field emitter, MEMS, and high-power transistor, we fabricated the nanoelectronic devices using both beta-SiC nano-wires and nano-thin films. With these preliminary application tests, it is expected that SiC nanowires can be used as field emitter and nanoelectronic high-power transistor, and application of the SiC nano-thin films to MEMS is promising as well.

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Ultrafast growth of single-crystalline Si nanowires

Continuous Preparation of SiC Nanowires Using Fluidized Bed Chemical Vapor Deposition Method

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Synthesis of Silicon Carbide Nanowires by Solid Phase Source Chemical Vapor Deposition

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Thermal evaporation and solution strategies to novel nanoarchitectures of silicon carbide

Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

One-dimensional SiC Nanostructures: Designed Growth, Properties, and Applications

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

Synthesis of Silicon Carbide Nanowires in a Catalyst-Assisted Process

Synthesis and growth mechanism of SiC/SiO2 nanochains by catalyst-free thermal evaporation method in Ar/CO atmosphere

Cubic SiC nano-thin films and nano-wires: high vacuum metal-organic chemical vapor deposition, surface characterization, and application tests

Synthesis of nanocrystalline silicon carbide powders

Single-crystalline chromium silicide nanowires and their physical properties

Synthesis of large-scale SiC@SiO2 nanowires with good optical properties by using Si@SiO2 as silicon source

Direct observation of the growth process of silicon carbide nanowhiskers by vapor–solid process

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Synthesis of SiC@SiO2 Nanocables Via a Catalyst-Free Carbothermal Reduction Method

Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper.