Abstract:Abstract In this study, the high-density SiC/SiO 2 core–shell nanowires were synthesized on the nickel coated SiO 2 (100 nm)/Si substrate by chemical vapor deposition (CVD) method with ferrocene precursor at temperature 1000 °C compared to previous studies (1300–1600 °C). The present work provides an efficient strategy for the production of SiC/SiO 2 nanowires with uniform morphology and good optical properties, where the Ni layer plays important roles for this fabrication at low temperature which reduces the decomposition temperature of hydrocarbon gases and improves the growth quality of SiC nanowires. The as-synthesized SiC/SiO 2 nanowires consist of single crystal 3C structures as well as 3C structures with defects along [111] direction. In the photoluminescence (PL) spectrum, the SiC/SiO 2 core–shell nanowires revealed an obvious blueshift. The blueshift is due to the formation of nanoscale silicon carbide polytypism caused by the stacking faults in 3C–SiC and the nanoscale polytypism also caused the transition from indirect to direct bandgap which explains why the stacking faults percentage in SiC confirmed from X-ray diffraction (XRD) is 19%, but ultimately makes the strongest emission intensity. Finally, the PL characteristics are further improved by changing the diameter of the SiC nanowire and etching and an approximate model followed by the vapor–liquid–solid (VLS) mechanism was proposed to explain the possible growth mechanism of the SiC/SiO 2 nanowires.

Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition

Ultrafast growth of single-crystalline Si nanowires

Continuous Preparation of SiC Nanowires Using Fluidized Bed Chemical Vapor Deposition Method

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Preparation of Silicon Carbide Nanowires and Nanochains Using Chemical Vapor Deposition Method

Ultrafast synthesis of SiC nanowire webs by floating catalysts rationalised through in-situ measurements and thermodynamic calculations

Synthesis of SiC Nanowires in Fluidized Bed and Its Microstructure

Facile growth of oriented SiC nanowires arrays on carbon fiber cloth via CVD

Growth of Tapered SiC Nanowires on Flexible Carbon Fabric: Toward Field Emission Applications

Tuning the morphologies of SiC nanowires via the control of growth temperature, and their photoluminescence properties.

Synthesis of large-scale SiC@SiO2 nanowires with good optical properties by using Si@SiO2 as silicon source

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

Ultralong Single Crystal Silicon Nanowires Synthesized by Chemical Vapor Deposition

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

Large Areas of Centimeters-Long SiC Nanowires Synthesized by Pyrolysis of a Polymer Precursor by a CVD Route

Synthesis of Silicon Carbide Nanowires by Solid Phase Source Chemical Vapor Deposition

Large-scale Synthesis of Monodisperse SiC Nanoparticles with Adjustable Size, Stoichiometric Ratio and Properties by Fluidized Bed Chemical Vapor Deposition

Controllable growth of high-density tapered N-doped SiC nanowires arrays

Narrow-chirality distributed single-walled carbon nanotube synthesized from oxide promoted Fe–SiC catalyst

Growth of SiC nanowires/nanorods using a Fe–Si solution method