Synthesis of SiC Nanowires in Fluidized Bed and Its Microstructure

Ren Kegang,Chen Kexin,Zhou Heping,Ning Xiaoshan,Jin Haibo,Zhong Jidong
DOI: https://doi.org/10.3321/j.issn:1002-185X.2009.z2.015
2009-01-01
Rare Metal Materials and Engineering
Abstract:Element Si was employed to synthesize SiC nanowire at a high purity nitrogen flow of 0.2 L/min in a fluidized bed. The temperature of the reaction was maintained at 1600 degrees C for 30 min. SiC nanowire could be obtained at the bottom of receiver. XRD analysis results revealed that the crystal type of as-received products were 6H type. SEM observation showed that the diameter of the nanowire was about 20 similar to 40 nm and the aspect ratio was conducted to be over than 1 X 10(3). SEM image also revealed the formation mechanism of the nanowire, from which VLS mechanism could be proposed. Comparing the EDX spectra, droplets at the top of nanowires had more O element than nanowires themselves. Therefore 0 element promoted the formation of SiC nanowires by VLS mechanism. TEM observation showed that there was much stacking fault in nanowires.
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