Growth of SiC Nanowires from NiSi Solution

Renbing Wu,Guangyi Yang,Mingxia Gao,Baosheng Li,Jianjun Chen,Rui Zhai,Yi Pan
DOI: https://doi.org/10.1021/cg701101j
IF: 4.01
2009-01-01
Crystal Growth & Design
Abstract:We present a simple melt solution strategy for the growth of high-yield SiC nanowires out of NiSi solution. The growth temperature and base vacuum before filling argon during the reaction are found to have a significant effect on the morphology of the product growth. Taking into consideration the action of Ni in the NiSi melt and the possible participation of a tiny amount of oxygen, the formation of SiC nanowires is discussed by a combination of the solid-liquid-solid reaction for nucleation and the vapor-liquid-solid process for nanowire growth. The nanowires were also investigated with Raman spectroscopy. Such a simple and economical method may be extended to synthesize other one-dimensional nanostructures.
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