Catalytic growth of α-FeSi2 and silicon nanowires

Z.Y. Zhang,X.L. Wu,L.W. Yang,G.S. Huang,G.G. Siu,Paul K. Chu
DOI: https://doi.org/10.1016/j.jcrysgro.2005.02.061
IF: 1.8
2005-01-01
Journal of Crystal Growth
Abstract:Via vaporization of Fe and Si powders mixed with a molar ratio of 1:1, α-FeSi2 nanowires were synthesized on one Si wafer, where the temperature is higher than 950°C and Fe supply is enough, and meantime Si nanowires were obtained on the other Si wafer, where the temperature is lower than 500°C and Fe atoms are much less than Si atoms in vapor. The two kinds of nanowires have diameters of 40–80nm and lengths of 3–10μm. Their shapes, crystallinity, and compositions are studied in terms of field emission scanning electron microscopy, X-ray diffraction spectra, and energy dispersive X-ray spectroscopy. From the obtained experimental results, we explain the growth mechanism of the two kinds of nanowires using the vapor–liquid–solid growth model. Two important conditions, high temperatures and enough Fe supply, are emphasized for syntheses of the α-FeSi2 nanowires.
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