Abstract:Flexible field emission (FE) arrays have a wide range of applications in next generation low-cost, lightweight and wearable electronics, roll-up displays, and large-area circuits on curved objects, yet the growth of tapered, high-quality single-crystalline nanostructure-based emitters on flexible substrates with superior FE properties remains challenging and related work is limited. On the other hand, our recent studies have shown that silicon carbide (SiC) 1D nanostructures could meet nearly any stringent requirement for an ideal FE emitter. In this contribution, we report the growth of quasi-aligned, single-crystalline n-type doped (N-doped) 3C-SiC nanoneedles (3C-SiCNNs) on highly flexible carbon fabric via the catalyst assisted pyrolysis of polysilazane. The as-synthesized SiCNNs possess a tapered structure with tiny clear tips with sizes of several to tens of nanometers. The fabricated 3C-SiCNNs have extremely low emission turn-on fields (E-on) in the range of 0.5-1.6 V mu m(-1) with an average of 1.1 V mu m(-1), which is comparable to the lowest value ever reported for 1D nanostructure emitters that, however, are grown on rigid substrates. Specifically, our SiCNN arrays on carbon fabric are mechanically and electrically robust, and can withstand mechanical bending up to 500 times and still retain excellent FE performance with E-on of similar to 1.1 V mu m(-1). The field-enhancement factor has been calculated to be 6.5 x 10(3). The superior FE properties can be attributed to the significant enhancements of the tapered unique morphology and N-doping of the SiCNNs. Calculations based on local density functional theory suggest that nitrogen dopants in the 3C-SiC nanostructure could favor a more localized impurity state near the conduction band edge, which improves the electron field emission. We strongly believe that the present work will provide a new insight into the fabrication of flexible field emission arrays with ultralow turn-on fields enhanced by both shape and doping.

Growth of Tapered SiC Nanowires on Flexible Carbon Fabric: Toward Field Emission Applications

Growth Of N-Type 3c-Sic Nanoneedles On Carbon Fabric: Toward Extremely Flexible Field Emission Devices

Efficiently producing single-walled carbon nanotube rings and investigation of their field emission properties

Ultrafast growth of single-crystalline Si nanowires

Controlled growth of SiC flexible field emitters with clear and sharp tips

Synthesis and Characterization of Carbon Nanotube Grown on Flexible and Conducting Carbon Fiber Sheet for Field Emitter

In-situ growth of SiC nanowire arrays on carbon fibers and their microwave absorption properties

Efficient Carbon Nanotube Field Emitter Using Electrospun Carbon Nanofibers as a Flexible Electrode

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Photoluminescence property of inexpensive flexible SiC nanowires membrane by electrospinning and carbothermal reduction

Preparation of Highly Flexible SiC Nanowires by Fluidized Bed Chemical Vapor Deposition

Carbon Nanotubes On Carbon Fabrics For Flexible Field Emitter Arrays

Well-aligned SiC nanoneedle arrays for excellent field emitters

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate

Controllable growth of high-density tapered N-doped SiC nanowires arrays

Needle-Shaped Silicon Carbide Nanowires: Synthesis and Field Electron Emission Properties

Field electron emission from silicon carbide nanowires prepared on stainless steel substrate

Facile growth of oriented SiC nanowires arrays on carbon fiber cloth via CVD