Abstract:Integrated field emission electron sources with low driving voltage are desired for micro/nano vacuum electronics. Herein, we demonstrate the enhanced and stable electron emission from crystalline gold–silver (Au–Ag) alloy nanoparticle capped Si nanowires (SiNWs) and the achieved gated electron sources with low driving voltage (<50 V). Thermally induced self-assembly hemispherical (50–80 nm) crystalline Au–Ag nanoparticles were prepared and used as masks in plasma etching to form vertically aligned high aspect ratio (~14) SiNWs. The nanoparticles were preserved after the etching, forming in situ integrated Au–Ag/Si junctions with each individual SiNWs. The SiNWs with capped nanoparticles possess superior field emission current density (45.80 mA/cm<sup>2</sup>) and current stability (fluctuation ~6%). A self-aligned process was developed to fabricate gated field emission devices, using the Au–Ag nanoparticle capped SiNWs as cathode. The gated devices showed field emission at low gate voltage (69.52- $mu text{A}$ /cm<sup>2</sup> at 42.1 V). Experimental and numerical simulation studies demonstrated the Au–Ag/Si contact behaved as space-charge-limited (SCL) Schottky conduction. The idea behind the enhancing and stable emission is that the SCL–Schottky junction undergoes a process of negative feedback and thus suppressed the current and shot-noise from the outstanding SiNWs. Accordingly, more SiNWs were activated and contributed stable and higher field emission current.

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

Nanoparticle-density-dependent Field Emission of Surface-Decorated SiC Nanowires

Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires

Field Emission from Nonaligned SiC Nanowires

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

High-Performance Field Emitters Based on SiC Nanowires with Designed Electron Emission Sites

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Shape And Doping Enhanced Field Emission Properties Of Quasialigned 3c-Sic Nanowires

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Fabrication of cone-shaped CNF/SiC-coated Si-nanocone composite structures and their excellent field emission performance

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

High Performance Field Emission of Silicon Carbide Nanowires and Their Applications in Flexible Field Emission Displays

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

Synthesis of carbon nanotubes/Si nanowires core-sheath structure arrays and their field emission properties

Field Emission Study Of Sic Nanowires/Nanorods Directly Grown On Sic Ceramic Substrate

Enhanced Field Emission of Quasi-aligned 3C-SiC Nanoarrays Alloyed with Tiny Co Nano-Tips

Enhanced Field Emission Property of a Novel Al2O3nanoparticle-decorated Tubular SiC Emitter with Low Turn-on and Threshold Field

Growth of Tapered SiC Nanowires on Flexible Carbon Fabric: Toward Field Emission Applications