Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

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Well-aligned SiC nanoneedle arrays for excellent field emitters

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

Nanoparticle-density-dependent Field Emission of Surface-Decorated SiC Nanowires

Fabrication and Field Emission Properties of Multi-Walled Carbon Nanotube/silicon Nanowire Array

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Fabrication of cone-shaped CNF/SiC-coated Si-nanocone composite structures and their excellent field emission performance

Field emission property of aligned and random SiC nanowires arrays synthesized by a simple vapor–solid reaction

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

CoO/NiSi(x) Core-Shell Nanowire Arrays As Lithium-Ion Anodes with High Rate Capabilities.

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Synthesis and Field Emission Property of SiCN Cone Arrays

Improving Field Emission by Constructing CsI–AlN Hybrid Nanostructures

Construction of AlN-Based Core–Shell Nanocone Arrays for Enhancing Field Emission

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

Large-Scale Aligned Silicon Carbonitride Nanotube Arrays: Synthesis, Characterization, and Field Emission Property