Abstract:Nickel silicides are promising candidates in modern semiconductor devices as contact metals, metal gate electrodes, and source/drains in field effect transistors. A multistep template replication process was utilized to fabricate highly periodic and well-aligned silicon nanowires (SiNWs), and the size could be further reduced via dry oxidation and post chemical treatment. NiSi/Si heterostructured nanowire arrays were fabricated by nickel film deposition on SiNWs and then rapid thermal annealing at 550 °C. Field emission (FE) measurements illustrated that the turn-on field and field enhancement factor β of NiSi/Si heterostructures were 1.3 V/μm and ∼9000, better than that of the SiNWs, which were about 1.9 V/μm and ∼3900. These results are superior to the FE properties of other silicon-based nanomaterials. The excellent FE characteristics are attributed to the uniformly distributed nanowires with high aspect ratio and large proximity, high conductivity of uniform NiSi coating, and favorable morphological features with sharp and rough tips as hot emission spots. The single-crystalline silicon nanowires shelled with polycrystalline NiSi provide substantial opportunities for integration with Si devices to form active field emitters, and for exploration of the nickel silicides on other electrical and optical properties.

Field emission property of aligned and random SiC nanowires arrays synthesized by a simple vapor–solid reaction

Aligned SiC Porous Nanowire Arrays with Excellent Field Emission Properties Converted from Si Nanowires on Silicon Wafer

Well-aligned SiC nanoneedle arrays for excellent field emitters

Field emission properties of ultra-high density vertical aligned silicon nanowires

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

Three-dimensional Branched SiC Nanowire Field Emitters with Single-Crystal Integrated Structures and Increased Emission Sites: Ultralow Turn-on Field and High Stability

Controlling the growth and field emission properties of silicide nanowire arrays by direct silicification of Ni foil.

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Synthesis and Raman Spectra of Si-Nanowires

Shape And Doping Enhanced Field Emission Properties Of Quasialigned 3c-Sic Nanowires

Field emission behavior of aligned carbon nanofiber arrays

Tunable field emission properties of well-aligned silicon nanowires with controlled aspect ratio and proximity

Fabrication and Field Emission Properties of Multi-Walled Carbon Nanotube/silicon Nanowire Array

Synthesis and Field Emission Property of SiCN Cone Arrays

Array-orderly single crystalline silicon nano-wires

Field Emission Properties of a Single Silicon Carbide Nanowire

Nanoparticle-density-dependent Field Emission of Surface-Decorated SiC Nanowires

Enhanced Field Emission of Au Nanoparticle-Decorated SiC Nanowires

Enhanced Field Emission of Quasi-aligned 3C-SiC Nanoarrays Alloyed with Tiny Co Nano-Tips

Large-Scale Aligned Silicon Carbonitride Nanotube Arrays: Synthesis, Characterization, and Field Emission Property