Abstract:This study investigates the electron field emission induced from vertical silicon nanowires (SiNWs) fabricated onto n-type Si(100) and p-type Si(100) substrates using catalyst-induced etching. The impact of dopant (n- and p-type), optical energy gap, and crystallite size on field electron emission(FEE) parameters has been explored in detail. The surface morphology of as-grown SiNWs has been characterized by field emission scanning electron microscopy (FESEM), showing the vertical, well aligned SiNWs. Optical absorption and Raman spectroscopy confirmed the presence of the quantum confinement(QC) effect. The electron field emission performance of the grown nanowires array has been examined through recorded I-V measurements under the Fowler–Nordheim framework. The SiNWs grown onto p-type Si showed a minimum turn-on field, indicating a higher field enhancement factor. The band-bending diagram also suggests a lower barrier height between p- type SiNWs than the n- type SiNWs, thus enhancing the electron field emission performance. These investigations suggest that the dopant (n- and p-type), band gap, and crystallite size influence the field emission parameters, and p-type Si substrates are favorable for electron emission in current saturation.

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