Field Emission Properties of Carbon Nanotubes Grown on Silicon Nanowire Arrays

YM Liu,SS Fan

DOI: https://doi.org/10.1016/j.ssc.2004.09.058

IF: 1.934

2005-01-01

Solid State Communications

Abstract:Carbon nanotubes are synthesized on the silicon nanowire arrays which are fabricated on silicon substrate by chemical vapor depositing SiCl4 and H2 gases in the presence of Au catalysts. The silicon nanowires are single-crystal with lengths up to 100μm and diameters ranging from 50 to 500nm. The tangled carbon nanotubes are grown directly from the surface of Si nanowires. The field emission properties of the carbon nanotubes are investigated at the gap of 200μm. The low turn on and threshold fields are obtained. The stabilization of the emission currents is also presented.