Abstract:ZnO nanostructures are exceedingly important building blocks for nanodevices due to their wide band gap and large exciton binding energy. However, their electronic transport characteristics are unstable and unrepeatable with external environment variation. Here, we demonstrate that electron transport of an individual ZnO nanowire-based device with the two same electrodes can be controllably modulated by applying a relatively large uni-/bidirectional bias. After being modulated, moreover, their electrical properties can well be maintained at relatively low operation bias and room temperature, demonstrating a memory behavior. The presence of surface states related to lattice periodicity breaking and traps associated with oxygen vacancy (Vo) and zinc interstitial (Zni) deep-level defects plays a crucial role in tunable electron transport with a memory feature. For the single nanowire-based two-terminal device, two back-to-back connected surface barrier diodes with series resistance are formed. The filling and emptying of traps near two end electrodes can remarkably adjust the width and height of the surface barrier. At a relatively low bias, the unmodulated conductance is governed by the electron hopping of bulk traps since the height of emptied traps is higher than that of the surface barrier, whereas at a relatively large bias, it is dominated by thermion emission due to a dramatic decrease of the surface barrier width resulting from the electron injection into traps from a negative electrode. Moreover, it will be beneficial for a thin surface barrier to penetrate UV light and separate photoexcited electron-hole pairs. After being asymmetrically modulated by a unidirectional injection, it can be successfully applied to realize a self-driven UV photodetector based on a photovoltaic effect in the symmetrical two-electrode structure. Our work provides a new route to tune electrical properties of nanostructures, which may inspire the development of novel electronic and optoelectronic devices.

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Controllable P-N Switching Behaviors of Gaas Nanowires Via an Interface Effect

Utilization of Electron Beam to Modulate Electron Injection over Schottky Barrier

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Electrothermal Dynamics of Semiconductor Nanowires under Local Carrier Modulation.

Field-induced Semiconductor-Metal Transition in Individual NiO–Ni Schottky Nanojunction

Si Nanowire With Integrated Space-Charge- Limited Conducted Schottky Junction for Enhancing Field Electron Emission and Its Gated Devices

Modulation of Field Emission Current from ZnO Nanowires by High Voltage A-Si Thin Film Transistor

Nanoelectromechanical Switches by Controlled Switchable Cracking

Plasmon-Induced Heterointerface Thinning for Schottky Barrier Modification of Core/Shell SiC/SiO2 Nanowires.

Sub-Millisecond Visible-Light Gating of a Zinc Oxide Nanowire

Bias-Controlled Tunable Electronic Transport with Memory Characteristics in an Individual ZnO Nanowire for Realization of a Self-Driven UV Photodetector with Two Symmetrical Electrodes

Current Self-Complianced and Self-Rectifying Resistive Switching in Ag-Electroded Single Na-Doped Zno Nanowires

Enhanced non-volatile resistive switching in suspended single-crystalline ZnO nanowire with controllable multiple states.

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Part B: Imaging Dielectric Properties of Si Nanowire Oxide with Conductive Atomic Force Microscopy Complemented with Femtosecond Laser Illumination

Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors

Direct observation and manipulation of hot electrons at room temperature