Abstract:One-dimensional metal-oxide nanowires are regarded as important building blocks in nanoscale electronics, because of their unique mechanical and electrical properties. In this work, p-type nickel oxide nanowires (NiO NWs) were fabricated by combining sol-gel and electrospinning processes. The poly(vinylpyrrolidone) (PVP) with a molecular weight of 1 300 000 was used as the polymer matrix to increase the viscosity of a NiO precursor solution. The formation and properties of the as-spun NiO/PVP composite NWs before/after calcination treatment were investigated using various techniques. Because of the enhanced adhesion properties between ultraviolet (UV)-treated NiO NWs and the substrate, the field-effect transistors (FETs) based on NiO NWs were found to exhibit satisfying p-channel behaviors. For the fabrication of aligned NiO NW arrays, two parallel conducting Si strips were grounded as NW collector. The integrated FETs based on aligned NiO NWs were demonstrated to exhibit superior electrical performance, compared to the disordered counterparts with the comparable NW coverage. By employing high-k aluminum oxide (Al2O3) as a dielectric layer, instead of conventional SiO2, the devices with an aligned NiO NW array exhibit a high hole mobility of 2.8 cm(2)/(V s) with a low operating voltage of 5 V, fast switching speed, and successful modulation of light emission over external light-emitting diodes. To the best of our knowledge, this is the first work demonstrating the low-voltage transistors based on p-type oxide NWs, which represents a great step toward the development of sensors and CMOS logic circuits.

Field-induced Semiconductor-Metal Transition in Individual NiO–Ni Schottky Nanojunction

Metal-insulator transition in Au-NiO-Ni dual Schottky nanojunctions.

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Schottky Junctions: Photothermal‐Induced Nanowelding of Metal–Semiconductor Heterojunction in Integrated Nanowire Units (Adv. Electron. Mater. 5/2018)

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Field-induced Semiconductor–metal Transition of Hybrid ZnO and Graphene Nanocomposites

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Schottky-Ohmic Transition in Metal-All-around Electrical Contacts to Silicon Nanowires

Synthesis and Property of One-Dimensional Metal/Semiconductor Heterojunction Nanomaterials

p-Type Field Effect Transistors Based on Schottky Junction Ag@SnO Nanostructures

Well-Aligned Nisi/Si Heterostructured Nanowire Arrays As Field Emitters

On The Annealing-Induced Enhancement Of The Interface Properties Of Nio:Cu/Wet-Siox/N-Si Tunnelling Junction Solar Cells

Arrays of Ni Nanowire/multiwalled Carbon Nanotube/amorphous Carbon Nanotube Heterojunctions Containing Schottky Contacts

Influence of External Electric Field on Piezotronic Effect in Zno Nanowires

Structure and Electrical Properties of Ni Nanowire/Multiwalled‐Carbon Nanotube/Amorphous Carbon Nanotube Heterojunctions

Exploring the Impact of Ni Doping in Tuning the Bandgap, Electronic, Optoelectronic and Photocatalytic Properties of ZnFe2O4

Electrospun P-Type Nickel Oxide Semiconducting Nanowires for Low-Voltage Field-Effect Transistors

Metal-to-insulator transition in oxide semimetals by anion doping

Nanoscale semiconductor-insulator-metal core/shell heterostructures: facile synthesis and light emission.