Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Ying Wang,Taibin Wang,Hongjie Zhang,Dayan Liu,Jinjie Qian,Ran Du,Hua Xu,Shuchen Zhang,Zhi Yang,Qiuchen Zhao,Yue Hu,Shaoming Huang
DOI: https://doi.org/10.1021/acs.jpclett.2c02117
2022-01-01
Abstract:Single-walled carbon nanotube (SWNT)-based devices are expected to play an important role in the next generation of electronic integrated circuits. As an important structural unit for SWNT-based electronics, the Schottky junction has a series of functions such as rectification, photoelectric detection, switching, etc. Here, we demonstrate a well-controlled localized radical reaction method to prepare an intramolecular SWNT Schottky junction with a closed edge. This junction exhibits strong gate-dependent rectifying behavior and a high rectification ratio of 962. Furthermore, the semiconducting part on the junction side could be effectively tuned from p-type doping to n-type doping, resulting in reversible rectifying behavior. Our work paves a new avenue for the design and synthesis of an SWNT Schottky junction, which is very important to future applications for carbon-based nanoelectronic devices.
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